续流二极管反向恢复测试

        产品范围：

MOSFET、IGBT、DIODE、BJT，第三代半导体器件等分立器件，以及上述元件构成的功率模块

测试项目：

静态参数                                                     符号

Drain to Source Breakdown Voltage       BVDSS

Drain Leakage Current                             IDSS

Gate Leakage Current                              IGSS

Gate Threshold Voltage                          VGS(th)

Drain to Source On Resistance                RDS(on)

Drain to Source On Voltage                      VDS(on)

Body Diode Forward Voltage                      VSD

Internal Gate Resistance                                Rg

Gate to Source Plateau Voltage          Vgs(pl)

动态参数                                                     符号

Turn-on delay time                                  td(on)

Rise time                                                     tr

Turn-off delay time                                    td(off)

Fall time                                                       tf

Turn-on energy                                         Eon

Turn-off energy                                         Eoff

Diode reverse recovery time                       trr

Diode reverse recovery charge                 Qrr

Diode peak reverse recovery current       Irrm

Diode peak rate of fall of reverse

recovery current                                       dirr/dt

Reverse biased safe operating area        RBSOA

Short circuit safe operation area            SCSOA

续流二极管反向恢复测试
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